標題: Bipolar resistive switching characteristics of Gd2O3 thin film structure
作者: Chang, K. M.
Tzeng, W. H.
Liu, K. C.
Chan, Y. C.
Kuo, C. C.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2011
摘要: The resistive switching (RS) behavior of the Ti/Gd2O3/Pt capacitor structure is fabricated and discussed in this paper. The switching characteristics operated under positive bias exhibits stable switching properties with a condensed voltage and resistance values dispersion, while the switching characteristics becomes unstable and large fluctuation on switching parameters under the negative bias operation. We suggest that the anode electrode plays an important role to the switching characteristics, and might be the causes of the asymmetry of the I-V curves between positive and negative operation. Constant voltage stress measurement is also tested to reveal the switching mechanism of the Gd2O3 film, and the switching mechanism is mainly based on the applied voltage and thermal Joule heat.
URI: http://hdl.handle.net/11536/20363
http://dx.doi.org/10.1149/1.3569906
ISBN: 978-1-60768-214-1
ISSN: 1938-5862
DOI: 10.1149/1.3569906
期刊: DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3
Volume: 35
Issue: 3
起始頁: 137
結束頁: 144
顯示於類別:會議論文


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