|標題:||Bipolar resistive switching characteristics of Gd2O3 thin film structure|
|作者:||Chang, K. M.|
Tzeng, W. H.
Liu, K. C.
Chan, Y. C.
Kuo, C. C.
Department of Electronics Engineering and Institute of Electronics
|摘要:||The resistive switching (RS) behavior of the Ti/Gd2O3/Pt capacitor structure is fabricated and discussed in this paper. The switching characteristics operated under positive bias exhibits stable switching properties with a condensed voltage and resistance values dispersion, while the switching characteristics becomes unstable and large fluctuation on switching parameters under the negative bias operation. We suggest that the anode electrode plays an important role to the switching characteristics, and might be the causes of the asymmetry of the I-V curves between positive and negative operation. Constant voltage stress measurement is also tested to reveal the switching mechanism of the Gd2O3 film, and the switching mechanism is mainly based on the applied voltage and thermal Joule heat.|
|期刊:||DIELECTRICS IN NANOSYSTEMS -AND- GRAPHENE, GE/III-V, NANOWIRES AND EMERGING MATERIALS FOR POST-CMOS APPLICATIONS 3|