Full metadata record
DC FieldValueLanguage
dc.contributor.authorHsu, C. H.en_US
dc.contributor.authorLin, Y. P.en_US
dc.contributor.authorHsu, H. J.en_US
dc.contributor.authorTsai, C. C.en_US
dc.date.accessioned2014-12-08T15:28:04Z-
dc.date.available2014-12-08T15:28:04Z-
dc.date.issued2012-09-01en_US
dc.identifier.issn0022-3093en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jnoncrysol.2011.12.102en_US
dc.identifier.urihttp://hdl.handle.net/11536/20334-
dc.description.abstractWe employed the low temperature hydrogenated amorphous silicon nitride (a-SiNx:H) prepared by plasma-enhanced chemical vapor deposition as a refractive index (n) matching layers in a silicon-based thin-film solar cell between glass (n = 1.5) and the transparent conducting oxide (n = 2). By varying the stoichiometry, refractive index and thickness of the a-SiNx:H layers, we enhanced the spectral response and efficiency of the hydrogenated amorphous silicon thin-film solar cells. The refractive index of a-SiNx:H was reduced from 2.32 to 1.78. Optimizing the a-SiNx:H thickness to 80 nm increased the J(SC) from 8.3 to 9.8 mA/cm(2) and the corresponding cell efficiency increased from 4.5 to 53%, as compared to the cell without the a-SiNx:H index-matching layer on planar substrate. The a-SiNx:H layers with graded refractive indices were effective for enhancing the cell performance. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectHydrogenated amorphous silicon thin-film solar cellen_US
dc.subjectPlasma enhanced chemical vapor depositionen_US
dc.subjectHydrogenated amorphous silicon nitrideen_US
dc.titleEnhanced spectral response by silicon nitride index matching layer in amorphous silicon thin-film solar cellsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jnoncrysol.2011.12.102en_US
dc.identifier.journalJOURNAL OF NON-CRYSTALLINE SOLIDSen_US
dc.citation.volume358en_US
dc.citation.issue17en_US
dc.citation.spage2324en_US
dc.citation.epage2326en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000310394700094-
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000310394700094.pdf