標題: Improvement of a-Si1-xGex:H single-junction thin-film solar cell performance by bandgap profiling techniques
作者: Hsu, Hung-Jung
Hsu, Cheng-Hang
Tsai, Chuang-Chuang
資訊工程學系
Department of Computer Science
關鍵字: Thin-film solar cell;Amorphous silicon germanium;Bandgap grading
公開日期: 1-Sep-2012
摘要: In this work, the effect of hydrogen dilution on the Ge content of the film and the effect of bandgap grading in the a-S1-xGex:H absorber near the p/i and the i/n interfaces on cell performance were discussed. The a-Si1-xGex:H single-junction solar cells were improved by employing both p/i grading and i/n grading. The i/n grading increased the V-OC and the FF while it also reduced the J(SC) as compared to the cell without grading. Presumably the potential gradient established by the i/n grading facilitates the hole transport hereby improved by the FF. On the contrary, the potential barrier established by the p/i grading seemed to limit the cell performance and constrain the p/i grading width below 20 nm due to the drop in FF and J(SC). Combining the effects of bandgap grading on the V-OC, J(SC) and FF, the suitable thicknesses of the p/i and the i/n grading were 20 nm and 45 nm, respectively. Finally, the grading structures accompanied with further optimization in doped layers were integrated to achieve a cell efficiency of 8.59%. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jnoncrysol.2011.12.103
http://hdl.handle.net/11536/20333
ISSN: 0022-3093
DOI: 10.1016/j.jnoncrysol.2011.12.103
期刊: JOURNAL OF NON-CRYSTALLINE SOLIDS
Volume: 358
Issue: 17
起始頁: 2277
結束頁: 2280
Appears in Collections:Conferences Paper


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