標題: LATERAL TITANIUM SILICIDE GROWTH AND ITS SUPPRESSION USING THE A-SI/TI BILAYER STRUCTURE
作者: LOU, YS
WU, CY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-三月-1995
摘要: The effects of internal oxygen impurities released from the TiSiO2 reaction on the lateral silicide growth using the a-Si/Ti bilayer structure are presented. The lateral silicide growth can be effectively retarded by internal oxygen impurities using a-Si/Ti bilayer process after silicidation at a temperature below 700 degrees C. Compared with the simultaneously processed single Ti layer process, it is observed that both high-level oxygen impurities and their redistribution in the possible Si-diffusion paths play the same important role on the suppression of the lateral silicide growth. Finally, the oxygen redistribution-dependent kinetics is developed to give a self-consistent explanation fo; the experimental observations from both the single Ti layer process and the a-Si/Ti bilayer process.
URI: http://dx.doi.org/10.1016/0038-1101(94)00162-9
http://hdl.handle.net/11536/2033
ISSN: 0038-1101
DOI: 10.1016/0038-1101(94)00162-9
期刊: SOLID-STATE ELECTRONICS
Volume: 38
Issue: 3
起始頁: 715
結束頁: 720
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QK01500025.pdf