標題: C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
作者: Tang, Shih Hsuan
Kuo, Chien I.
Hai Dang Trinh
Hudait, Mantu
Chang, Edward Yi
Hsu, Ching Yi
Su, Yung Hsuan
Luo, Guang-Li
Hong Quan Nguyen
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: Ge MOSCAP;CMOS integration;RTO;ALD Al2O3;Ge epitaxial film
公開日期: 1-Sep-2012
摘要: Epitaxial germanium metal-oxide-semiconductor capacitors (MOSCAP) were fabricated on GaAs substrate using atomic layer deposited Al2O3 gate dielectric with surface treatments including pure HF and HF plus rapid thermal oxidation (RTO). The electrical characteristics of 10 nm Al2O3/Ge MOSCAP showed p-type behavior with excellent C-V responses and low leakage current. Interface state density in the order of 10(11) eV(-1) cm(-2) was determined from the conductance method and the HF plus RTO treatment exhibits better Al2O3/Ge interface quality than that of pure HF treatment. (C) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.mee.2012.03.014
http://hdl.handle.net/11536/20320
ISSN: 0167-9317
DOI: 10.1016/j.mee.2012.03.014
期刊: MICROELECTRONIC ENGINEERING
Volume: 97
Issue: 
起始頁: 16
結束頁: 19
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