標題: Observation of fluctuation-induced tunneling conduction in micrometer-sized tunnel junctions
作者: Lai, Yu-Ren
Yu, Kai-Fu
Lin, Yong-Han
Wu, Jong-Ching
Lin, Juhn-Jong
電子物理學系
物理研究所
Department of Electrophysics
Institute of Physics
公開日期: 1-九月-2012
摘要: Micrometer-sized Al/AlOx/Y tunnel junctions were fabricated by the electron-beam lithography technique. The thin (approximate to 1.5-2 nm thickness) insulating AlOx layer was grown on top of the Al base electrode by O-2 glow discharge. The zero-bias conductances G(T) and the current-voltage characteristics of the junctions were measured in a wide temperature range 1.5-300 K. In addition to the direct tunneling conduction mechanism observed in low-G junctions, high-G junctions reveal a distinct charge transport process which manifests the thermally fluctuation-induced tunneling conduction (FITC) through short nanoconstrictions. We ascribe the experimental realization of the FITC mechanism to originating from the formations of "hot spots" (incomplete pinholes) in the AlOx layer owing to large junction-barrier interfacial roughness. Copyright 2012 Author(s). This article is distributed under a Creative Commons Attribution 3.0 Unported License. [http://dx.doi.org/10.1063/1.4749251]
URI: http://dx.doi.org/10.1063/1.4749251
http://hdl.handle.net/11536/20317
ISSN: 2158-3226
DOI: 10.1063/1.4749251
期刊: AIP ADVANCES
Volume: 2
Issue: 3
結束頁: 
顯示於類別:期刊論文


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