標題: Improving the photoluminescence properties of self-assembled InAs surface quantum dots by incorporation of antimony
作者: Chiang, C. H.
Wu, Y. H.
Hsieh, M. C.
Yang, C. H.
Wang, J. F.
Chen, Ross C. C.
Chang, L.
Chen, J. F.
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
關鍵字: InAs;Surface quantum dot;Antimony;Surfactant;Segregation
公開日期: 15-八月-2011
摘要: This study investigates the effects of surfactant and segregation from InAs surface quantum dots (SQDs) by incorporating antimony (Sb) into the QD layers. The Sb surfactant effect extends planar growth and suppresses dot formation. Incorporating Sb can reduce the density of SQDs by more than two orders of magnitude. Photoluminescence (PL) reveals enhancement in the optical properties of InAs SQDs as the Sb beam equivalent pressure (BEP) increases. This improvement is caused by the segregation of Sb on the surface of SQDs, which reduces non-radiative recombination and suppresses carrier loss. The dark line at the SQDs surface in the transmission electron microscopic image suggests that the incorporated Sb probably segregates close to the surface of the SQDs. These results indicate a marked Sb segregation effect that can be exploited to improve the surface-sensitive properties of SQDs for biological sensing. Crown Copyright (C) 2011 Published by Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2011.04.006
http://hdl.handle.net/11536/20312
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.04.006
期刊: APPLIED SURFACE SCIENCE
Volume: 257
Issue: 21
起始頁: 8784
結束頁: 8787
顯示於類別:期刊論文


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