標題: An Extended-Gate Field-Effect Transistor With Low-Temperature Hydrothermally Synthesized SnO2 Nanorods as pH Sensor
作者: Li, Hung-Hsien
Dai, Wei-Syuan
Chou, Jung-Chuan
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Extended-gate field-effect transistor (EGFET);hydrothermal method;pH sensor;SnO2 nanorods
公開日期: 1-十月-2012
摘要: An extended-gate field-effect transistor (EGFET) with low-temperature hydrothermally synthesized SnO2 nanorods as the pH sensor was demonstrated for the first time. The SnO2 nanorod sensor exhibited the higher sensitivity of 55.18 mV/pH and larger linearity of 0.9952 in the wide sensing range of pH 1-13 with respect to the thin-film one. The nearly 15% sensitivity enhancement for such a sensor was attributed to the high surface-to-volume ratio of the nanorod structure, reflecting larger effective sensing areas. The characteristics of the output voltage versus sensing time also indicated good reliability and durability for the SnO2 nanorod sensor. Furthermore, the hysteresis was only 3.69 mV after the solution was changed as pH7 --> pH3 --> pH7 --> pH11 --> pH7.
URI: http://dx.doi.org/10.1109/LED.2012.2210274
http://hdl.handle.net/11536/20309
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2210274
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 10
起始頁: 1495
結束頁: 1497
顯示於類別:期刊論文


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