標題: Influence of Oxygen Concentration on Resistance Switching Characteristics of Gallium Oxide
作者: Huang, Jheng-Jie
Chang, Ting-Chang
Yang, Jyun-Bao
Chen, Shih-Ching
Yang, Po-Chun
Chen, Yu-Ting
Tseng, Hsueh-Chih
Sze, Simon M.
Chu, Ann-Kuo
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Gallium oxide;nonvolatile resistance switching memory;resistance random access memory (RRAM)
公開日期: 1-Oct-2012
摘要: In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
URI: http://dx.doi.org/10.1109/LED.2012.2206365
http://hdl.handle.net/11536/20306
ISSN: 0741-3106
DOI: 10.1109/LED.2012.2206365
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 33
Issue: 10
起始頁: 1387
結束頁: 1389
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