Title: CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
Authors: CHAO, TS
LEI, TF
電控工程研究所
Institute of Electrical and Control Engineering
Issue Date: 1-Mar-1995
Abstract: Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
URI: http://dx.doi.org/10.1149/1.2048576
http://hdl.handle.net/11536/2027
ISSN: 0013-4651
DOI: 10.1149/1.2048576
Journal: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 3
Begin Page: L34
End Page: L35
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  1. A1995QL58500002.pdf