標題: CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2O
作者: CHAO, TS
LEI, TF
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-三月-1995
摘要: Growth mechanisms of three different orientations Si wafer oxidized in N2O have been investigated in this study. A thickness crossover phenomenon in oxidation rates was found for orientations (110) and (111) at a critical oxide thickness 150 Angstrom. From our results, this phenomenon is closely related with the initial native oxide before oxidation.
URI: http://dx.doi.org/10.1149/1.2048576
http://hdl.handle.net/11536/2027
ISSN: 0013-4651
DOI: 10.1149/1.2048576
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 3
起始頁: L34
結束頁: L35
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QL58500002.pdf