標題: EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS
作者: LIN, CT
CHAO, CH
JUANG, MH
JAN, ST
CHOU, PF
CHENG, HC
奈米中心
Nano Facility Center
公開日期: 1-三月-1995
摘要: Excellent shallow p(+)n junctions have been formed by implanting BF2+ ions into thin polycrystalline Si films and subsequent annealing. The samples implanted at 50 keV to a dose 5 x 10(15) cm(-2) show a leakage of 1 nA/cm(2) and a junction depth of about 0.05 mu m after a 800 degrees C annealing. To reduce the series resistances of the junctions, silicidation with different col;alt thickness was used to drive the as-implanted dopants in the polysilicon films into the resultant junctions of the silicon substrates. For the low energy implantation at 50 keV at all dosages, silicidation can result in poor electrical characteristics due to the confinement of the dopants by the silicidation process. On the other hand, the electrical characteristics can be retained when a higher implantation energy of 100 keV with a dosage higher than 5 x 10(15) cm 2 was used. In addition, the samples implanted at 125 keV show poor electrical characteristics for the nonsilicided junctions but good characteristics after the silicidation. It is attributed to the enhanced defect annihilation by the formed silicide. Furthermore, silicided implanted through poly-Si junctions with excellent characteristics can be fabricated after a low temperature (600 degrees C) annealing if the samples are implanted at 100 keV with a dosage higher than 5 X 10(15) cm(-2).
URI: http://hdl.handle.net/11536/2026
ISSN: 0013-4651
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 3
起始頁: 913
結束頁: 917
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QL58500047.pdf