標題: Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
作者: Hsu, Wei-Ting
Liao, Yu-An
Hsu, Feng-Chang
Chiu, Pei-Chin
Chyi, Jen-Inn
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 15-八月-2011
摘要: The optical properties of GaAsSb-capped InAs quantum dots (QDs) with different capping layer thickness are investigated. Both the emission energy and the recombination lifetime are found to be correlated with the capping layer thicknesses. Theoretical calculations indicate that the quantum confinement and the wave function distribution of hole states are sensitive to the GaAsSb capping layer thickness. The Sb induced change in QD size also plays a role in the optical properties of GaAsSb-capped QDs. Controlling the GaAsSb capping layer thickness is a feasible way to tailor the InAs QDs for long-wavelength applications. (C) 2011 American Institute of Physics. [doi:10.1063/1.3624464]
URI: http://dx.doi.org/10.1063/1.3624464
http://hdl.handle.net/11536/20201
ISSN: 0003-6951
DOI: 10.1063/1.3624464
期刊: APPLIED PHYSICS LETTERS
Volume: 99
Issue: 7
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000294208900050.pdf