標題: Enhanced Nucleation and Growth of Diamond Film on Si by CVD Using a Chemical Precursor
作者: Tiwari, Rajanish N.
Tiwari, Jitendra N.
Chang, Li
Yoshimura, M.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 18-八月-2011
摘要: Nucleation of diamond is of great importance for its growth, and a detailed understanding of the nucleation process is, therefore, desired for Many applications. The pretreatment of the substrate surface may impact the initial growth period. This study demonstrates the synthesis of diamond films by microwave plasma chemical vapor deposition on a Pt/SiO(2)/Si substrate. The Pt particles were deposited on the SiO(2)/Si surface at room temperature, Whereas adamantane was seeded on the SiO(2)/Si surface by ultrasonic treatment:The Pt particles on the SiO(2) surface behave as a catalyst, which adsorb hydrocarbons from adamantane contained plasma and give distinct features of carbon in the early stage deposition The adamantane transforms not only in the nanodiamond phase but also in other carbon phases, which can then act as nuclei for diamond growth. These kinds of phases enhanced the diamond density at partially low temperature deposition. The presence of an oxide intermediate layer betweeen Pt and Si prevents silicidation as well as SiC in diamond deposition.
URI: http://dx.doi.org/10.1021/jp2041179
http://hdl.handle.net/11536/20156
ISSN: 1932-7447
DOI: 10.1021/jp2041179
期刊: JOURNAL OF PHYSICAL CHEMISTRY C
Volume: 115
Issue: 32
起始頁: 16063
結束頁: 16073
顯示於類別:期刊論文


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