標題: RECESSED-GATE ALGAAS/INGAAS/GAAS PSEUDORMORPHIC HEMT WITH SI-PLANAR-DOPED ETCH-STOP LAYER
作者: LAN, WH
LIN, WJ
PENG, CK
CHEN, SS
TU, SL
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: HIGH ELECTRON MOBILITY TRANSISTORS;ETCHING
公開日期: 30-三月-1995
摘要: An improved slot etch technique based on an Si planar doped laver has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable g(m) with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices.
URI: http://dx.doi.org/10.1049/el:19950374
http://hdl.handle.net/11536/2006
ISSN: 0013-5194
DOI: 10.1049/el:19950374
期刊: ELECTRONICS LETTERS
Volume: 31
Issue: 7
起始頁: 592
結束頁: 594
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QT82300058.pdf