標題: HIGH-PERFORMANCE NITRIDED OXIDES FABRICATED BY VERY-LOW-PRESSURE NITRIDATION TECHNIQUE
作者: SU, HP
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: NITRIDED OXIDES;LOW-PRESSURE NITRIDATION;GATE DIELECTRICS;INTERFACE STABILITY;TIME-DEPENDENT DIELECTRIC BREAKDOWN
公開日期: 1-四月-1995
摘要: A never and simple method is proposed to produce high-performance nitrided oxides. Thin oxides nitrided only in NH3 at 900 degrees C for 1 h at 0.1 Torr have excellent interface stability, few electron traps, and excellent reliability. Although the nitrogen concentration [N] at the dielectric/Si substrate interface is kept at a low value, the hydrogen concentration [H] has been shown to be comparable to that of pure oxide at the beginning of the nitridation. Consequently, a high ratio of [N]/[K], which reflects the stable interface, can be attained at the initial stage of the very-low-pressure nitridation (VLPN). This is very different from the case of conventional low-pressure nitridation. The retarded formations of the interfacial Si3N4 and the surface nitrogen-rich oxynitrides are conjectured to be the main cause of reduction in the hydrogen content in the dielectrics during VLPN. Due to the simplicity and wide process window, VLPN is promising for the future ultra-large-scale-integration (ULSI) technology.
URI: http://dx.doi.org/10.1143/JJAP.34.1816
http://hdl.handle.net/11536/2003
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.1816
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 4A
起始頁: 1816
結束頁: 1821
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RF66000019.pdf