Title: Angle-resolved characteristics of silicon photovoltaics with passivated conical-frustum nanostructures
Authors: Tseng, Ping-Chen
Yu, Peichen
Chen, Hsin-Chu
Tsai, Yu-Lin
Han, Hao-Wei
Tsai, Min-An
Chang, Chia-Hua
Kuo, Hao-Chung
Department of Electrophysics
Department of Photonics
Keywords: Passivation;Nanostructure;Angle-resolved reflectance
Issue Date: 1-Sep-2011
Abstract: Passivation plays a critical role in silicon photovoltaics, yet how a passivation layer affects the optical characteristics of nano-patterned surfaces has rarely been discussed. In this paper, we demonstrate conical-frustum nanostructures fabricated on silicon solar cells using polystyrene colloidal lithography with various silicon-nitride (SiN(x)) passivation thicknesses. The omnidirectional and broadband antireflective characteristics were determined by utilizing angle-resolved reflectance spectroscopy. The conical-frustum arrays with a height of 550 nm and a SiN(x) thickness of 80 nm effectively suppressed the Fresnel reflection in the wavelength range from 400 to 1000 nm, up to an incidence angle of 60 degrees. As a result, the power conversion efficiency achieved was 13.39%, which showed a 9.13% enhancement compared to that of a conventional KOH-textured silicon cell. The external quantum efficiency measurements confirmed that the photocurrent was mostly contributed by the increased optical absorption in the near-infrared. The angular cell efficiencies were estimated and showed improvements over large angles of incidence. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.solmat.2011.05.010
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2011.05.010
Volume: 95
Issue: 9
Begin Page: 2610
End Page: 2615
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