標題: REACTIVE ION ETCHING OF GAINP, GAAS, AND ALGAAS
作者: WU, JW
CHANG, CY
CHANG, EY
CHANG, SH
LIN, KC
材料科學與工程學系
電控工程研究所
Department of Materials Science and Engineering
Institute of Electrical and Control Engineering
公開日期: 1-四月-1995
摘要: We have investigated the reactive ion etching of GaInP, GaAs, and AlGaAs. High etching selectivity of GaAs to AlGaAs (or to GaInP) can be achieved due to the formation of aluminum fluoride (AlF3) and indium fluoride (InF3) using a BCl3/SF6 mixture. By using a CH4/H-2 mixture, a polymer film is accumulated on the GaAs surface after reactive ion etching. This polymer film inhibits the reactive ion etching of GaAs. There is no polymer film accumulated on the surface of GaInP. The polymer deposited on the surface of GaInP is removed as the etching products are being removed. Hence, a high etching selectivity of GaInP to GaAs can be achieved by using a CH4/H-2 mixture.
URI: http://dx.doi.org/10.1149/1.2044174
http://hdl.handle.net/11536/1998
ISSN: 0013-4651
DOI: 10.1149/1.2044174
期刊: JOURNAL OF THE ELECTROCHEMICAL SOCIETY
Volume: 142
Issue: 4
起始頁: 1340
結束頁: 1343
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QT02900059.pdf