標題: Improving Safe Operating Area of nLDMOS Array With Embedded Silicon Controlled Rectifier for ESD Protection in a 24-V BCD Process
作者: Chen, Wen-Yi
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);poly-bending (PB) layout;reliability;safe operating area (SOA);silicon-controlled rectifier (SCR)
公開日期: 1-九月-2011
摘要: In high-voltage technologies, silicon-controlled rectifier (SCR) is usually embedded in output arrays to provide a robust and self-protected capability against electrostatic discharge (ESD). Although the embedded SCR has been proven as an excellent approach to increasing ESD robustness, mistriggering of the embedded SCR during normal circuit operating conditions can bring other application reliability concerns. In particular, the safe operating area (SOA) of output arrays due to SCR insertion has been seldom evaluated. In this paper, the impact of embedding SCR to the electrical SOA (eSOA) of an n-channel LDMOS (nLDMOS) array has been investigated in a 24-V bipolar CMOS-DMOS process. Experimental results showed that the nLDMOS array suffers substantial degradation on eSOA due to embedded SCR. Design approaches, including a new proposed poly-bending (PB) layout, were proposed and verified in this paper to widen the eSOA of the nLDMOS array with embedded SCR. Both the high ESD robustness and the improved SOA of circuit operation can be achieved by the new proposed PB layout in the nLDMOS array.
URI: http://dx.doi.org/10.1109/TED.2011.2159861
http://hdl.handle.net/11536/19825
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2159861
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 9
起始頁: 2944
結束頁: 2951
顯示於類別:期刊論文


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