標題: Effects of RCA clean-up procedures on the formation of roughened poly-Si electrodes for high-density DRAMs' capacitors
作者: Liu, HW
Lai, WK
Yu, SY
Huang, SC
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RCA clean-up procedures;poly-Si electrodes;high-density Drams' capacitors
公開日期: 1-十一月-1997
摘要: A novel structure, the phosphorus-implanted poly-Si films treated with phosphoric acid (H3PO4) and cleaned by standard RCA cleanup procedures, has been demonstrated as the bottom electrodes of DRAMs' stacked capacitors. After the H3PO4 treatment and RCA cleaning process, micro-island structures are formed on the poly-Si surface of the storage electrodes, The NH4OH + H2O2 + H2O (SC-1) solution in the RCA cleaning procedures is the main component to change the porous surfaces and engraved structures, formed by H3PO4 treatment, into micro-islands. Although the electrical properties are slightly degraded compared to the control samples, but they fulfill the requirements of high-density DRAMs, resulting from the increment of cell capacitance. (C) 1997 Elsevier Science S.A.
URI: http://hdl.handle.net/11536/198
ISSN: 0254-0584
期刊: MATERIALS CHEMISTRY AND PHYSICS
Volume: 51
Issue: 2
起始頁: 195
結束頁: 198
顯示於類別:期刊論文


文件中的檔案:

  1. A1997YF93100020.pdf