標題: THIN POLYOXIDE ON THE TOP OF POLY-SI GATE TO SUPPRESS BORON PENETRATION FOR PMOS
作者: LIN, YH
LEE, CL
LEI, TF
CHAO, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1995
摘要: A method of using a thin oxide on the top of the poly-Si gate to getter fluorine for BF2+ in pMOS is proposed and demonstrated. Due to less amount of fluorine in the poly-Si as well as in the gate oxide, the boron penetration through the gate oxide is suppressed. The MOS capacitors fabricated by using this method show less shifts and distortion on C-V curves and better electrical characteristics.
URI: http://dx.doi.org/10.1109/55.382227
http://hdl.handle.net/11536/1971
ISSN: 0741-3106
DOI: 10.1109/55.382227
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 5
起始頁: 164
結束頁: 165
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QW57100003.pdf