標題: FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2O
作者: CHAO, TS
CHEN, WH
LEI, TF
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: FTIR;N2O;OXIDE;ELLIPSOMETER
公開日期: 1-五月-1995
摘要: The properties of the oxide films grown by pure N2O were studied in this work. A two-layer model, considering a N2O oxide with an oxy-nitride film at the interface, was used to describe the dependence of the main peak shift in a Fourier transform infrared (FTIR) spectrum on N2O thicknesses. The thickness of interfacial layer was determined by FTIR and multiple-angle incident ellipsometer. Both methods showed consistent results and the thickness of this layer is found to be 14-16 Angstrom.
URI: http://dx.doi.org/10.1143/JJAP.34.2370
http://hdl.handle.net/11536/1966
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.2370
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 5A
起始頁: 2370
結束頁: 2373
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RF66200032.pdf