標題: IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
作者: UENG, SY
WANG, PW
KANG, TK
CHAO, TS
CHEN, WH
DAI, BT
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: RIE;POST ETCHING TREATMENTS;N2O;DAMAGE;MICROROUGHNESS;AFM
公開日期: 1-五月-1995
摘要: Thin oxides thermally grown in reactive-ion-etched (RIE) silicon substrates in N2O and diluted O-2 ambient have been studied. The microroughness of the oxide-silicon interface was investigated using a spectrophotometer, atomic force microscopy (AFM), and cross-sectional high-resolution electron microscopy (HRTEM). The microroughness is strongly dependent on the RIE conditions and the post etching treatments. Furthermore, oxidation-enhanced interface microroughness has been observed. As compared with the pure oxides grown in diluted oxygen, N2O-grown oxides exhibit stronger immunity to RIE-induced damage. N2O oxidation of the etched specimens treated with an after-treatment-chamber (ATC) process result in the best electrical properties.
URI: http://dx.doi.org/10.1143/JJAP.34.2266
http://hdl.handle.net/11536/1964
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.2266
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 34
Issue: 5A
起始頁: 2266
結束頁: 2271
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RF66200012.pdf