標題: A NOVEL EXTRACTION TECHNIQUE FOR THE EFFECTIVE CHANNEL-LENGTH OF MOSFET DEVICES
作者: LI, HH
WU, CY
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-五月-1995
摘要: A novel method using the charge pumping technique for extracting the effective channel length of MOSFET devices is presented, in which the effective area approach is used and the edges of the area are defined clearly. It is shown that the extracted effective channel length is independent of the measuring biases and the proposed new method is simple, accurate, and reliable, as compared to those using the I-V method. With the knowledge of the device dopant profiles, the extracted channel length with 0.01 mu m accuracy can be achieved. Moreover, the proposed method is applicable to either n- or p-channel, conventional or LDD, surface or buried channel MOSFET's.
URI: http://dx.doi.org/10.1109/16.381980
http://hdl.handle.net/11536/1962
ISSN: 0018-9383
DOI: 10.1109/16.381980
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 42
Issue: 5
起始頁: 856
結束頁: 863
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QU42700010.pdf