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dc.contributor.authorLee, CPen_US
dc.contributor.authorWang, SYen_US
dc.date.accessioned2014-12-08T15:27:19Z-
dc.date.available2014-12-08T15:27:19Z-
dc.date.issued1998en_US
dc.identifier.isbn0-7803-4306-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/19578-
dc.description.abstractBy using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained: InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs Rave also demonstrated with excellent performance.en_US
dc.language.isoen_USen_US
dc.titleNormal incident quantum well infrared photodetectorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGSen_US
dc.citation.spage637en_US
dc.citation.epage640en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000080928800171-
Appears in Collections:Conferences Paper