標題: Normal incident quantum well infrared photodetectors
作者: Lee, CP
Wang, SY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: By using highly doped InGaAs quantum wells, grating-free two color quantum well infrared photodetectors with large normal incidence responses have been demonstrated. These devices have comparable performance as conventional QWIPs with surface gratings but without the complexity of gratings. The TE absorption was found to be enhanced by the use of the highly strained: InGaAs quantum wells and the high doping concentration in the wells. Two-color QWIPs Rave also demonstrated with excellent performance.
URI: http://hdl.handle.net/11536/19578
ISBN: 0-7803-4306-9
期刊: 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
起始頁: 637
結束頁: 640
Appears in Collections:Conferences Paper