標題: STRONG ENHANCEMENT OF THE OPTICAL AND ELECTRICAL-PROPERTIES, AND SPONTANEOUS FORMATION OF AN ORDERED SUPERLATTICE IN (111)B ALGAAS
作者: CHIN, A
LIN, HY
HSIEH, KY
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1995
摘要: Strong enhancement in the luminescence intensity is observed in Al0.22Ga0.78As epitaxial layers grown on misoriented (111)B GaAs as compared to those simultaneously grown on (100) GaAs. For a 1 degrees misorientation the luminescence intensity is almost 10 to 1000 times that of the (100) layers, depending on the growth temperature. Room temperature electron mobility for 3 degrees misoriented (111)B Al0.18Ga0.82As is 19% higher than that for side-by-side grown (100). The strong luminescence associated with a large red shift of 90 meV and the 19% mobility enhancement are related to the long range composition ordering in (111)B AlGaAs, which is observed by cross-sectional transmission electron microscopy in a 280 Angstrom Al0.4GaAs quantum well heterostructure with Al0.7GaAs barriers grown on (111)B GaAs substrates.
URI: http://dx.doi.org/10.1016/0022-0248(94)00858-2
http://hdl.handle.net/11536/1949
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)00858-2
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 150
Issue: 1-4
起始頁: 436
結束頁: 440
顯示於類別:會議論文


文件中的檔案:

  1. A1995RC73100081.pdf