標題: Mobility and oxide breakdown behavior in ultra-this oxide with atomically smooth interface
作者: Cheng, YC
Chen, WJ
Lin, BC
Tsai, C
Chin, A
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: The device performance made by thin gate oxide is related to the oxide thickness uniformity and the interface smoothness. Unfortunately, native oxide roughens the initial surface before thermal oxidation. in this paper, we have designed a leak-tight low-pressure N2O oxidation system, and the native oxide is desorbed in-situ under H-2 environment, Atomically smooth oxide and Si interface of ultra-thill oxides (11-38 Angstrom) were achieved as observed by high-resolutional TEM. Significant mobility enhancement over large gate field is obtained by reducing interface roughness scattering. The oxide reliability is also improved by this smoother interface between Si and oxide.
URI: http://hdl.handle.net/11536/19489
http://dx.doi.org/10.1109/ICSICT.1998.785875
ISBN: 0-7803-4306-9
DOI: 10.1109/ICSICT.1998.785875
期刊: 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS
起始頁: 283
結束頁: 286
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000080928800077.pdf