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dc.contributor.authorYeh, CFen_US
dc.contributor.authorLiu, CHen_US
dc.date.accessioned2014-12-08T15:27:15Z-
dc.date.available2014-12-08T15:27:15Z-
dc.date.issued1998en_US
dc.identifier.isbn0-9651577-2-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/19488-
dc.identifier.urihttp://dx.doi.org/10.1109/PPID.1998.725614en_US
dc.description.abstractWe apply an alternative plasma damage-free process -- the selective liquid-phase deposition (S-LPD), instead of the conventional RIE to form metal/semiconductor contact holes. This paper studies the performance comparison between S-LPD and RIE to form contact hole in n(+)/p junction diode, Schottky diode, and ohmic contact. In our experiments, if the plasma-free S-LPD technique is adopted, there is excelled performance including lower reverse current, lower ideality factor, higher forward current, high Schottky barrier, lower contact resistance and better thermal stability in these devices.en_US
dc.language.isoen_USen_US
dc.titleApplying selective liquid-phase deposition to create contact holes in plasma damage-free processen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/PPID.1998.725614en_US
dc.identifier.journal1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGEen_US
dc.citation.spage223en_US
dc.citation.epage226en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000076807700055-
Appears in Collections:Conferences Paper


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