標題: Applying selective liquid-phase deposition to create contact holes in plasma damage-free process
作者: Yeh, CF
Liu, CH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1998
摘要: We apply an alternative plasma damage-free process -- the selective liquid-phase deposition (S-LPD), instead of the conventional RIE to form metal/semiconductor contact holes. This paper studies the performance comparison between S-LPD and RIE to form contact hole in n(+)/p junction diode, Schottky diode, and ohmic contact. In our experiments, if the plasma-free S-LPD technique is adopted, there is excelled performance including lower reverse current, lower ideality factor, higher forward current, high Schottky barrier, lower contact resistance and better thermal stability in these devices.
URI: http://hdl.handle.net/11536/19488
http://dx.doi.org/10.1109/PPID.1998.725614
ISBN: 0-9651577-2-5
DOI: 10.1109/PPID.1998.725614
期刊: 1998 3RD INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE
起始頁: 223
結束頁: 226
Appears in Collections:Conferences Paper


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