標題: Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications
作者: Pan, CL
Lin, GR
光電工程學系
Department of Photonics
關鍵字: arsenic-ion-implanted GaAs;GaAs : As+;ultrafast;photoconductive switch
公開日期: 1998
摘要: Arsenic-ion-implanted GaAs (or GaAs:As+), with excess-arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam-epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally-annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained.
URI: http://hdl.handle.net/11536/19484
http://dx.doi.org/10.1117/12.306153
ISBN: 0-8194-2716-0
ISSN: 0277-786X
DOI: 10.1117/12.306153
期刊: ULTRAFAST PHENOMENA IN SEMICONDUCTORS II
Volume: 3277
起始頁: 170
結束頁: 178
Appears in Collections:Conferences Paper


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