標題: FORMATION AND CHARACTERIZATION OF GAAS/AS SUPERLATTICE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW SUBSTRATE-TEMPERATURE
作者: CHENG, TM
CHANG, CY
HUANG, JH
電控工程研究所
Institute of Electrical and Control Engineering
公開日期: 1-May-1995
摘要: High-resolution X-ray diffractometer and transmission electron microscope (TEM) are used to characterize the redistribution of As precipitates in Si delta-doped GaAs grown by molecular beam epitaxy at low substrate temperature (230 degrees C). The superlattice satellite peaks are observed for samples annealed at 700-800 degrees C for 10 min, which is attributed to the formation of a GaAs/As superlattice during the annealing period. The degree of As precipitates confined on the delta-doped planes is revealed on the intensity of satellite peaks in the X-ray rocking curves, as confirmed by the TEM observations. The lattice expansion and contraction of the annealed low-temperature epitaxial layers can be easily observed from the asymmetry of the satellite peaks.
URI: http://dx.doi.org/10.1016/0022-0248(94)00740-3
http://hdl.handle.net/11536/1948
ISSN: 0022-0248
DOI: 10.1016/0022-0248(94)00740-3
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 150
Issue: 1-4
起始頁: 28
結束頁: 32
Appears in Collections:Conferences Paper


Files in This Item:

  1. A1995RC73100007.pdf