標題: THE EFFECT OF ANODIZING TEMPERATURE ON ANODIC OXIDE FORMED ON PURE AL THIN-FILMS
作者: CHIU, RL
CHANG, PH
TUNG, CH
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: ALUMINUM OXIDE;ANODIC OXIDATION;DIELECTRIC PROPERTIES;TRANSMISSION ELECTRON MICROSCOPY
公開日期: 1-五月-1995
摘要: The structure and properties of anodic Al2O3 films formed at different anodizing temperatures from thin Al films deposited by magnetron sputtering on oxidized Si wafers have been studied by transmission electron microscopy, secondary ion mass spectrometry, and electrical measurements. The anodic oxide films formed at 8 degrees C and 25 degrees C are amorphous with excellent dielectic properties, leakage current lower than 500 nA at 7.5 MV cm(-1) and no breakdown up to 7.5 MV cm(-1). Partially crystalline gamma'-Al2O3 is grown at the upper half of the 58 degrees C oxide film. This film exhibits much inferior dielectric properties than the lower temperature films. Carbon is incorporated into the top portion of the oxide films from the electrolyte during anodizing and it has little effect on the crystalline oxide formation. Oxygen penetrates into the underlying Al layer during anodizing. The penetration increases with increasing anodizing temperature.
URI: http://hdl.handle.net/11536/1943
ISSN: 0040-6090
期刊: THIN SOLID FILMS
Volume: 260
Issue: 1
起始頁: 47
結束頁: 53
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QX84600010.pdf