Title: Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
Authors: Su, Ching-Yuan
Lu, Ang-Yu
Wu, Chih-Yu
Li, Yi-Te
Liu, Keng-Ku
Zhang, Wenjing
Lin, Shi-Yen
Juang, Zheng-Yu
Zhong, Yuan-Liang
Chen, Fu-Rong
Li, Lain-Jong
光電工程學系
Department of Photonics
Keywords: Graphene;chemical vapor deposition;Raman spectroscopy;transparent conductive film;graphitization
Issue Date: 1-Sep-2011
Abstract: Direct formation of high-quality and wafer scale graphene thin layers on insulating gate dielectrics such as SiO(2) is emergent for graphene electronics using Si-wafer compatible fabrication. Here, we report that in a chemical vapor deposition process the carbon species dissociated on Cu surfaces not only result in graphene layers on top of the catalytic Cu thin films but also diffuse through Cu grain boundaries to the interface between Cu and underlying dielectrics. Optimization of the process parameters leads to a continuous and large-area graphene thin layers directly formed on top of the dielectrics. The bottom-gated transistor characteristics for the graphene films have shown quite comparable carrier mobility compared to the top-layer graphene. The proposed method allows us to achieve wafer-sized graphene on versatile insulating substrates without the need of graphene transfer.
URI: http://dx.doi.org/10.1021/nl201362n
http://hdl.handle.net/11536/19426
ISSN: 1530-6984
DOI: 10.1021/nl201362n
Journal: NANO LETTERS
Volume: 11
Issue: 9
Begin Page: 3612
End Page: 3616
Appears in Collections:Articles


Files in This Item:

  1. 000294790200018.pdf