標題: A comparative study of SILC transient characteristics and mechanisms in FN stressed and hot hole stressed tunnel oxides
作者: Zous, NK
Wang, TH
Yeh, CC
Tsai, CW
Huang, CM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1999
摘要: The mechanisms and transient characteristics of hot hole stress and FN stress induced excess leakage currents in tunnel oxides are investigated. Hot hole SILC is found to have a more pronounced transient effect. The transient is attributed to positive oxide charge detrapping and thus annihilation of positive charge-assisted tunneling current. The positive charge assisted tunneling current can be annealed by substrate hot electron injection. The DC and transient components in FN SILC are also discussed.
URI: http://hdl.handle.net/11536/19395
http://dx.doi.org/10.1109/RELPHY.1999.761647
ISBN: 0-7803-5220-3
DOI: 10.1109/RELPHY.1999.761647
期刊: 1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL
起始頁: 405
結束頁: 409
Appears in Collections:Conferences Paper


Files in This Item:

  1. 000079933100064.pdf