標題: An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's
作者: Chung, SS
Chen, SJ
Yih, CM
Yang, WJ
Chao, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1999
摘要: In this paper, an accurate criterion has been proposed for reliability evaluation of state-of-the-art deep-submicron S/D extension n-MOSFET's. A new monitor for HC reliability evaluation has been developed using total values of N-it in the effective channel length region, instead of commonly used substrate current(I-B), impact ionization rate (I-D/I-B), or peak/average N-it values. An accurate degradation model has thus been developed based on the N-it distribution and mobility scattering effect. Moreover, this approach has been successfully used to demonstrate the feasibility for gate-engineering studies.
URI: http://hdl.handle.net/11536/19394
http://dx.doi.org/10.1109/RELPHY.1999.761621
ISBN: 0-7803-5220-3
DOI: 10.1109/RELPHY.1999.761621
期刊: 1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 37TH ANNUAL
起始頁: 249
結束頁: 252
Appears in Collections:Conferences Paper


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