標題: WEAK INVERSION CHARGE INJECTION IN ANALOG MOS SWITCHES
作者: CHEN, MJ
GU, YB
WU, T
HSU, PC
LIU, TH
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1995
摘要: The on chip test circuit for examining the charge injection in analog MOS switches has been described in detail, and has been fabricated and characterized. Mixed-mode circuit and device simulations have been performed, creating excellent agreements not only with the experimental waveforms but also with the measured switch-induced error voltage, Further investigation of the experimental and simulated results has separated the charge injection into three distinct components: i) the channel charges in strong inversion; ii) the channel charges in weak inversion; and iii) the charges coupled through the gate-to-diffusion overlap capacitance, Important observations concerning the weak inversion charge injection have been drawn from the waveform of the current through the switched capacitor, In this work the channel charges in weak inversion have exhibited a 20% contribution to the switch-induced error voltage on a switched capacitor.
URI: http://dx.doi.org/10.1109/4.384177
http://hdl.handle.net/11536/1939
ISSN: 0018-9200
DOI: 10.1109/4.384177
期刊: IEEE JOURNAL OF SOLID-STATE CIRCUITS
Volume: 30
Issue: 5
起始頁: 604
結束頁: 606
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QV83200013.pdf