標題: A NEW ANALYTICAL EXPRESSION FOR THE INTERFACE INDEX OF METAL SCHOTTKY CONTACTS ON SEMICONDUCTORS
作者: SZE, JJ
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-五月-1995
摘要: By reconsidering the effect of the penetration depth of the interface states, a new analytical expression of the interface index has been achieved to successfully explain the role of the semiconductor ionicity in the behavior of metal-Schottky contacts on semiconductors. The derived interface indices not only fit quite well with the previous experimental data but also exhibit a sharp transition from the Bardeen limit to the Schottky limit for semiconductor ionicity around 0.8, which agrees well with the experiment reports.
URI: http://dx.doi.org/10.1016/0038-1101(95)98675-S
http://hdl.handle.net/11536/1937
ISSN: 0038-1101
DOI: 10.1016/0038-1101(95)98675-S
期刊: SOLID-STATE ELECTRONICS
Volume: 38
Issue: 5
起始頁: 1059
結束頁: 1063
顯示於類別:期刊論文


文件中的檔案:

  1. A1995QV34100017.pdf