標題: DLTS characterization of InAs self-assembled quantum dots
作者: Ilchenko, VV
Lin, SD
Lee, CP
Tretyak, OV
交大名義發表
National Chiao Tung University
公開日期: 2000
摘要: Deep level capacitance transient spectroscopy was used to obtain the energy level and the capture characteristics of InAs self-assembled quantum dots embedded in GaAs. A specially designed structure was used for the DLTS measurement for enhanced resolution. This structure allows us to detect capacitance relaxation signal from a single layer of quantum dots and to separate this signal from those of the DX centers inside the structure. The DLTS spectra with different filling pulses and different rate windows provide clear information on the energy level and the capture characteristics of the quantum dots.
URI: http://hdl.handle.net/11536/19277
http://dx.doi.org/10.1109/ISCS.2000.947126
ISBN: 0-7803-6258-6
DOI: 10.1109/ISCS.2000.947126
期刊: 2001 IEEE INTERNATIONAL SYMPOSIUM ON COMPOUND SEMICONDUCTORS
起始頁: 43
結束頁: 48
Appears in Collections:Conferences Paper


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