標題: Plasma process induced damage in sputtered TiN metal gate capacitors with ultra-thin nitrided oxide
作者: Chen, CC
Lin, HC
Chang, CY
Chao, TS
Huang, SC
Wu, WF
Huang, TY
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2000
摘要: A comprehensive study on plasma process induced damage (P2ID) in sputtered TiN metal-gated devices with 4nm N2O-nitrided oxide was performed. It is observed that the post-deposition RTA temperature affects both the flat-band voltage (Vfb) and interface state density (Dit). The TiN metal-gated devices also show a 8 Angstrom reduction in the effective oxide thickness, due to physical damage caused by sputtering and/or oxide consumption during the post annealing step. Finally, degradation in gate oxide integrity caused by severe charging damage during the additional plasma processes in the TiN metal gate process flow is also observed. The P2ID leads to significant degradation in charge-to-breakdown and gate leakage current increase, even for the genuinely robust nitrided oxide used in this study. Finally, N-2 plasma post-treatment is found to be effective in suppressing the gate leakage current.
URI: http://hdl.handle.net/11536/19252
http://dx.doi.org/10.1109/PPID.2000.870633
ISBN: 0-9651577-4-1
DOI: 10.1109/PPID.2000.870633
期刊: 2000 5TH INTERNATIONAL SYMPOSIUM ON PLASMA PROCESS-INDUCED DAMAGE
起始頁: 117
結束頁: 120
顯示於類別:會議論文


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  1. 000166707200033.pdf