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dc.contributor.authorLo, Ming-Huaen_US
dc.contributor.authorCheng, Yuh-Jenen_US
dc.contributor.authorLiu, Mei-Chunen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorWang, Shing Chungen_US
dc.date.accessioned2014-12-08T15:27:02Z-
dc.date.available2014-12-08T15:27:02Z-
dc.date.issued2011-09-12en_US
dc.identifier.issn1094-4087en_US
dc.identifier.urihttp://dx.doi.org/10.1364/OE.19.017960en_US
dc.identifier.urihttp://hdl.handle.net/11536/19248-
dc.description.abstractWe report the observation of room temperature lasing action in optically pumped GaN nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth from a GaN substrate. When nanopillars were optically excited, a narrow emission peak emerged from the broad spontaneous emission background. The increasing rate is nine times faster than that of the spontaneous emission background, showing the onset of lasing action. The lasing occurs right at the center of spontaneous emission rather than the often reported redshifted wavelength. A spectroscopic ellipsometry analysis indicates that the gain of lasing action is provided by exciton transition. (C) 2011 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleLasing at exciton transition in optically pumped gallium nitride nanopillarsen_US
dc.typeArticleen_US
dc.identifier.doi10.1364/OE.19.017960en_US
dc.identifier.journalOPTICS EXPRESSen_US
dc.citation.volume19en_US
dc.citation.issue19en_US
dc.citation.spage17960en_US
dc.citation.epage17965en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000294781200024-
dc.citation.woscount4-
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