標題: Lasing at exciton transition in optically pumped gallium nitride nanopillars
作者: Lo, Ming-Hua
Cheng, Yuh-Jen
Liu, Mei-Chun
Kuo, Hao-Chung
Wang, Shing Chung
光電工程學系
Department of Photonics
公開日期: 12-九月-2011
摘要: We report the observation of room temperature lasing action in optically pumped GaN nanopillars. The nanopillars were fabricated by patterned etching and crystalline regrowth from a GaN substrate. When nanopillars were optically excited, a narrow emission peak emerged from the broad spontaneous emission background. The increasing rate is nine times faster than that of the spontaneous emission background, showing the onset of lasing action. The lasing occurs right at the center of spontaneous emission rather than the often reported redshifted wavelength. A spectroscopic ellipsometry analysis indicates that the gain of lasing action is provided by exciton transition. (C) 2011 Optical Society of America
URI: http://dx.doi.org/10.1364/OE.19.017960
http://hdl.handle.net/11536/19248
ISSN: 1094-4087
DOI: 10.1364/OE.19.017960
期刊: OPTICS EXPRESS
Volume: 19
Issue: 19
起始頁: 17960
結束頁: 17965
顯示於類別:期刊論文


文件中的檔案:

  1. 000294781200024.pdf