標題: Design of efficient high-gower diode-end-pumped TEMoo Nd : YVO4 laser
作者: Chen, YF
Liao, CC
Lan, YP
Wang, SC
電子物理學系
Department of Electrophysics
關鍵字: thermal fracture;end-pumped;Nd-doped laser;Q-switched
公開日期: 2000
摘要: A systematic investigation on a series of Nd:YVO4 crystals with different dopant concentrations is conducted to scale the diode-end-pumped laser performance to higher powers. The analysis reveals that lowering the dopant concentration linearly extends the fracture-limited pump power and the thermal shock parameter plays an important role in the estimation of the fracture-limited pump power: The thermal shock parameter in Nd:YVO4 crystals has been determined from the laser experiments, Based onthe analysis, we demonstrate a compact and efficient diode-end-pumped TEMoo laser with output power of 25.2-W for 52-W of incident pump power by use of a single YVO4 crystal with a Nd concentration of 0.3 at.%. In Q-switched operation 2 I-W of average power at a pulse repetition rate of 100 kHz and similar to 1.1-m pulse energy at a pulse repetition rate of 10 kHz were produced.
URI: http://hdl.handle.net/11536/19245
http://dx.doi.org/10.1117/12.382755
ISBN: 0-8194-3546-5
ISSN: 0277-786X
DOI: 10.1117/12.382755
期刊: SOLID STATE LASERS IX
Volume: 3929
起始頁: 116
結束頁: 121
Appears in Collections:Conferences Paper


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