標題: Metastable photoluminescence in heavily Mg-doped GaN grown by metalorganic chemical vapor phase epitaxy
作者: Shu, CK
Lee, WH
Pan, YC
Huang, HY
Chen, HH
Chen, WH
Chen, WK
Lee, MC
電子物理學系
Department of Electrophysics
關鍵字: metastable;Mg-doped GaN;photoluminescence
公開日期: 2000
摘要: The long-term transient spectra of heavily Mg-doped GaN have been investigated. As the excitation power density increased, the broad Mg-induced emission band showed blue-shift revealing characteristic of donor-acceptor pair (DAP) recombination. We also observed an unusually slow intensity decay. The characteristic time constants range from several tenths to a few hundred seconds for emission between 360 and 460 nm. Our results are interpreted in terms of metastability due to compounded effects of differential DAP population and recombination rates and uneven acceptor distribution.
URI: http://hdl.handle.net/11536/19213
http://dx.doi.org/10.1117/12.392182
ISBN: 0-8194-3717-4
ISSN: 0277-786X
DOI: 10.1117/12.392182
期刊: OPTOELECTRONIC MATERIALS AND DEVICES II
Volume: 4078
起始頁: 521
結束頁: 526
Appears in Collections:Conferences Paper


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