標題: GROWTH OF EPITAXIAL-LIKE (SR0.5BA0.5)NB2O6 FERROELECTRIC-FILMS
作者: LIN, WJ
TSENG, TY
LIN, SP
TU, SL
YANG, SJ
HARN, JJ
LIU, KS
LIN, IN
電子工程學系及電子研究所
電控工程研究所
Department of Electronics Engineering and Institute of Electronics
Institute of Electrical and Control Engineering
關鍵字: SBN;EPITAXIAL;FERROELECTRIC;HYSTERESIS;THIN FILMS
公開日期: 15-May-1995
摘要: Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [001]YBa2Cu3O7-x (YBCO) as the base electrode. The theta-2 theta scan and phi-scan X-ray diffraction suggest that [210](SBN)//[100](YBCO)//[110]CeO2//[110](si). The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P-r) and coercive field (E(c)) are, respectively, P-r = 27.2 mu C/cm(2) and E(c) = 24.8 kV/cm.
URI: http://dx.doi.org/10.1143/JJAP.34.L625
http://hdl.handle.net/11536/1921
ISSN: 0021-4922
DOI: 10.1143/JJAP.34.L625
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 34
Issue: 5B
起始頁: L625
結束頁: L627
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