標題: Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETs
作者: Yang, KN
Huang, HT
Chen, MJ
Lin, YM
Yu, MC
Jang, SM
Yu, CH
Liang, MS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2000
摘要: This paper examines the edge direct tunneling (EDT) of hole from p(+) polysilicon to underlying p-type drain extension in off-state p-channel MOSFETs having ultrathin gate oxide thicknesses (1.2 - 2.2 nm). It is found that for thinner oxide thicknesses, hole EDT is more pronounced over the conventional GIDL and gate-to-channel tunneling, and as a result, the induced gate and drain leakage is better measured per unit gate width. A physical model accounting for heavy and light hole's subbands in the quantized accumulation polysilicon surface is built explicitly. This model consistently reproduces EDT I-V and the tunneling path size extracted falls adequately within the gate-to-drain overlap region. The ultimate oxide thickness limit due to EDT is projected as well.
URI: http://hdl.handle.net/11536/19189
http://dx.doi.org/10.1109/IEDM.2000.904410
ISBN: 0-7803-6439-2
DOI: 10.1109/IEDM.2000.904410
期刊: INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST
起始頁: 679
結束頁: 682
Appears in Collections:Conferences Paper


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