Title: Effects of Cr doping on physical properties of amorphous In-Ga-Zn-O films
Authors: Liu, Shiu-Jen
Su, Shih-Hao
Fang, Hau-Wei
Hsieh, Jang-Hsing
Juang, Jenh-Yih
材料科學與工程學系
電子物理學系
Department of Materials Science and Engineering
Department of Electrophysics
Keywords: Amorphous transparent conducting oxide;Diluted magnetic semiconductor;Indium gallium zinc oxide films;Cr doping
Issue Date: 15-Sep-2011
Abstract: Amorphous thin films of InGaZnO(4) (a-IGZO) doped with Cr have been fabricated by using pulsed-laser deposition (PLD). The electrical, optical and magnetic properties of Cr-doped a-IGZO films grown at 25 degrees C and 150 degrees C were investigated. The conductivity, optical transmission and band gap of films are remarkably enhanced by increasing the growth temperature. Conductivity, carrier concentration and mobility decrease with increasing the Cr content. However, the optical transmission and band gap are not significantly affected by Cr doping. Moreover, all Cr-doped films exhibit room-temperature ferromagnetism. (C) 2011 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2011.06.129
http://hdl.handle.net/11536/19182
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2011.06.129
Journal: APPLIED SURFACE SCIENCE
Volume: 257
Issue: 23
Begin Page: 10018
End Page: 10021
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