標題: A novel device structure for low-temperature polysilicon TFTs with controlled grain growth in channel regions
作者: Cheng, LJ
Lu, YL
Lin, CW
Chang, TK
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: low-temperature polysilicon thin-film transistors (LTPS TFTs);excimer-laser crystallization (ELC);recessed channel;localized lateral thermal gradient
公開日期: 2000
摘要: In this paper, we demonstrate a novel device structure of low-temperature polysilicon thin-film transistors (LTPS TFTs) for AMLCD applications with using excimer-laser crystallization (ELC). The device structure consists of a thin channel and a thick source/drain. This structure has its merit in the process of ELC and is capable of improving TFTs' electrical characteristics. During excimer laser irradiation, this kind of recessed structure is able to build up localized lateral thermal gradients in the regions near the steps and entice crystallization from the chiller thick source/drain regions toward the hotter thin channels. Because of the development of crystallization process, the average field-effect mobility of the devices can be increased to about 350 cm(2)/V.s, and the on/off current ratios exceed eight orders. In addition to improvement of device performance, the process window of ELC is broadened with the recessed structure.
URI: http://hdl.handle.net/11536/19171
http://dx.doi.org/10.1117/12.389424
ISBN: 0-8194-3718-2
ISSN: 0277-786X
DOI: 10.1117/12.389424
期刊: DISPLAY TECHNOLOGIES III
Volume: 4079
起始頁: 51
結束頁: 54
顯示於類別:會議論文


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