Title: Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
Authors: Huang, Huei-Min
Lu, Tien-Chang
Chang, Chiao-Yun
Ling, Shih-Chun
Chan, Wei-Wen
Kuo, Hao-Chung
Wang, Shing-Chung
Department of Photonics
Keywords: a-plane;InGaN-GaN MQWs;polarization;strain
Issue Date: 15-Sep-2011
Abstract: Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 x 10(-2) to 2.58 x 10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85% to 53% along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
URI: http://dx.doi.org/10.1109/JLT.2011.2164896
ISSN: 0733-8724
DOI: 10.1109/JLT.2011.2164896
Volume: 29
Issue: 18
Begin Page: 2761
End Page: 2675
Appears in Collections:Articles

Files in This Item:

  1. 000294203100010.pdf