標題: Investigation of Emission Polarization and Strain in InGaN-GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates
作者: Huang, Huei-Min
Lu, Tien-Chang
Chang, Chiao-Yun
Ling, Shih-Chun
Chan, Wei-Wen
Kuo, Hao-Chung
Wang, Shing-Chung
光電工程學系
Department of Photonics
關鍵字: a-plane;InGaN-GaN MQWs;polarization;strain
公開日期: 15-九月-2011
摘要: Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 x 10(-2) to 2.58 x 10(-2) while the nanorod height in templates increases from 0 to 1.7 mu m. The polarization ratio of the emission from InGaN MQWs varies from 85% to 53% along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.
URI: http://dx.doi.org/10.1109/JLT.2011.2164896
http://hdl.handle.net/11536/19170
ISSN: 0733-8724
DOI: 10.1109/JLT.2011.2164896
期刊: JOURNAL OF LIGHTWAVE TECHNOLOGY
Volume: 29
Issue: 18
起始頁: 2761
結束頁: 2675
顯示於類別:期刊論文


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  1. 000294203100010.pdf