標題: HIGH-BARRIER PT/AL/N-INP DIODE
作者: HUANG, WC
LEI, TF
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: SCHOTTKY-BARRIER DIODES;INDIUM PHOSPHIDE
公開日期: 25-五月-1995
摘要: A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface.
URI: http://dx.doi.org/10.1049/el:19950614
http://hdl.handle.net/11536/1915
ISSN: 0013-5194
DOI: 10.1049/el:19950614
期刊: ELECTRONICS LETTERS
Volume: 31
Issue: 11
起始頁: 924
結束頁: 925
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RC65600060.pdf