標題: NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOS
作者: LIN, YH
LAI, SC
LEE, CL
LEI, TF
CHAO, TS
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-1995
摘要: Nitridation to create nitrogen-rich layers in-between the stacked layers of the poly-Si gate to suppress the boron penetration for pMOS with the gate BF (+)(2)-implantation is proposed and demonstrated, The MOS capacitors fabricated by using this nitridized stacked poly-Si gate have better thermal stability and much improved electrical characteristics.
URI: http://dx.doi.org/10.1109/55.790724
http://hdl.handle.net/11536/1904
ISSN: 0741-3106
DOI: 10.1109/55.790724
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 16
Issue: 6
起始頁: 248
結束頁: 249
顯示於類別:期刊論文


文件中的檔案:

  1. A1995RA18200012.pdf